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    首頁(yè)產(chǎn)品索引STTH1506D

    STTH1506D

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    串聯(lián)600V超高速升壓二極管

     

    中文數(shù)據(jù)手冊(cè)

    產(chǎn)品信息

    The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt.turboswitch“H”是由兩個(gè)串聯(lián)的300V骰子超高性能二極管。turboswitch“H”家庭大幅削減損失相關(guān)的MOSFET當(dāng)運(yùn)行在高性/藥物療法。

    Key Features

    • ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS

    • DESIGNED FOR HIGH DI/DT OPERATION. HYPERFAST RECOVERY CURRENT TO COMPETE WITH SIC DEVICES. ALLOWS DOWNSIZING OF MOSFET AND HEATSINKS

    • INTERNAL CERAMIC INSULATED DEVICES WITH EQUAL THERMAL CONDITIONS FOR BOTH 300V DIODES

    • INSULATION (2500VRMS) ALLOWS PLACEMENT ON SAME HEATSINK AS MOSFET AND FLEXIBLE HEATSINKING ON COMMON OR SEPARATE HEATSINK

    • STATIC AND DYNAMIC EQUILIBRIUM OF INTERNAL DIODES ARE WARRANTED BY DESIGN

    • PACKAGE CAPACITANCE: C=16pF

    主要特點(diǎn)

    尤其適合作為升壓二極管在連續(xù)模式功率因數(shù)校正器和硬開關(guān)條件

    專為高di/dt操作。超高速恢復(fù)電流與SiC器件的競(jìng)爭(zhēng)。允許MOSFET和散熱器裁員

    內(nèi)部的陶瓷絕緣裝置為300V二極管相同溫度條件

    絕緣(2500vrms)允許放置在相同的散熱器作為MOSFET和靈活的共同或單獨(dú)的散熱片散熱

    靜態(tài)和動(dòng)態(tài)平衡的內(nèi)部二極管是必要的設(shè)計(jì)

    封裝的電容:C = 16PF


    電路圖、引腳圖和封裝圖

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