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    首頁(yè)產(chǎn)品索引STPSC40065C

    STPSC40065C

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    650體積功率肖特基二極管

     

    中文數(shù)據(jù)手冊(cè)

    產(chǎn)品信息

    The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

    Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions.

    碳化硅二極管是一種超高性能的功率肖特基二極管。它是使用碳化硅襯底制造的。寬禁帶材料允許的肖特基二極管結(jié)構(gòu)的設(shè)計(jì)與650伏的評(píng)級(jí)。由于肖特基結(jié)構(gòu),沒有恢復(fù)被證明在關(guān)斷和鈴聲模式是可以忽略不計(jì)。最小的電容關(guān)斷行為是獨(dú)立的溫度。

    特別適合使用在PFC應(yīng)用,這將促進(jìn)ST SiC二極管在硬開關(guān)條件下的性能。

    Key Features

    • No or negligible reverse recovery

    • Switching behavior independent of temperature

    • Dedicated to PFC applications

    • ECOPACK?2 compliant component

    主要特點(diǎn)

    沒有或可以忽略不計(jì)的反向恢復(fù)

    溫度開關(guān)行為

    致力于PFC的應(yīng)用

    ?Ecopack 2兼容的組件


    電路圖、引腳圖和封裝圖

    應(yīng)用案例更多案例

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