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    首頁產(chǎn)品索引STPSC1006

    STPSC1006

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    600體積功率肖特基二極管

     

    中文數(shù)據(jù)手冊(cè)

    產(chǎn)品信息

    The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

    ST SiC diodes will boost the performance of PFC operations in hard switching conditions.

    碳化硅二極管是一種超高性能的功率肖特基二極管。它是使用碳化硅襯底制造的。寬禁帶材料允許的肖特基二極管結(jié)構(gòu)的設(shè)計(jì)與600伏的評(píng)級(jí)。由于肖特基結(jié)構(gòu)沒有恢復(fù)是在關(guān)斷和鈴聲模式顯示可以忽略不計(jì)。最小的電容關(guān)斷行為是獨(dú)立的溫度。

    ST SiC二極管將促進(jìn)在硬開關(guān)條件下PFC操作的性能。

    Key Features

    • No or negligible reverse recovery

    • Switching behavior independent of temperature

    • Particularly suitable in PFC boost diode function

    主要特點(diǎn)

    沒有或可以忽略不計(jì)的反向恢復(fù)

    溫度開關(guān)行為

    在PFC升壓二極管功能特別適合


    電路圖、引腳圖和封裝圖

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