The STW81200 is a dual architecture frequency synthesizer (Fractional-N and Integer-N), that features three low phase-noise VCOs with a fundamental frequency range of 3.0 GHz to 6.0 GHz and a programmable dual RF output divider stage which allows coverage from 46.875 MHz to 6 GHz.

The STW81200 optimizes size and cost of the final application thanks to the integration of low- noise LDO voltage regulators and internally-matched broadband RF outputs.

The STW81200 is compatible with a wide range of supply voltages (from 3.0 V to 5.4 V) providing to the end user a very high level of flexibility which trades off excellent performance with power dissipation requirements. A low-power functional mode (software controlled) gives an extra power saving.

Additional features include crystal oscillator core, external VCO mode and output-mute function.

這是一stw81200雙結(jié)構(gòu)頻率合成器（小數(shù)和整數(shù)），具有三的低相位噪聲VCO具有3 GHz基波頻率范圍為6 GHz的射頻輸出分頻器和一個(gè)可編程的雙階段允許范圍從46.875 MHz到6 GHz。

的stw81200優(yōu)化最終的應(yīng)用由于規(guī)模和成本低噪聲LDO穩(wěn)壓器和內(nèi)部匹配的寬帶射頻輸出一體化。

是的stw81200具有寬范圍的電源電壓兼容（從3 V至5.4 V）提供給最終用戶一個(gè)非常高水平的靈活性，結(jié)合了功率耗散要求性能優(yōu)良。一種低功耗的功能模式（軟件控制）提供了一個(gè)額外的省電。

附加功能包括晶體振蕩器的核心，外部VCO模式輸出靜音功能。

Key Features

• Output frequency range: 46.875 to 6000 MHz

• Very Low Noise

• Normalized in band phase noise floor: -227 dBc/Hz

• VCO phase noise: -135 dBc/Hz @ 1 MHz offset, 4.0 GHz carrier

• Noise floor: -160 dBc/Hz

• Dual architecture frequency synthesizer: Fractional-N and Integer-N

• Integrated VCOs with automatic center frequency calibration

• Programmable RF output dividers by 1/2/4/8/16/32/64

• Dual RF Output broadband matched with programmable power level and mute function

• External VCO option with 5 V charge pump

• Integrated low noise LDO voltage regulators

• Maximum phase detector frequency: 100 MHz

• Exact frequency mode

• Fast lock and cycle slip reduction

• Differential reference clock input (LVDS and LVECPL compliant) supporting up to 800 MHz

• 13-bit programmable reference frequency divider

• Programmable charge pump current

• Digital lock detector

• Integrated reference crystal oscillator core

• R/W SPI interface

• Logic compatibility/tolerance 1.8 V/3.3 V

• Low Power Functional mode

• Supply Voltage: 3.0 V to 5.4 V

• Small size exposed pad VFQFPN36 package 6 x 6 x 1.0 mm

• Process: BICMOS 0.25 μm SiGe

主要特點(diǎn)

輸出頻率范圍：46.875至6000兆赫

噪音非常低

帶內(nèi)相位噪聲地板標(biāo)準(zhǔn)：- 227 dBc / Hz

VCO的相位噪聲：135 dBc/Hz @ 1 MHz偏移，4 GHz載波

底噪：- 160 dBc / Hz

雙重結(jié)構(gòu)：小數(shù)和整數(shù)分頻頻率合成器

自動(dòng)校準(zhǔn)的集成VCO的中心頻率

可編程RF輸出分頻器的1 / 2 / 4 / 8 / 16 / 32 / 64

具有可編程功率級(jí)和靜音功能的雙射頻輸出寬帶匹配

5伏的電荷泵外部振蕩器選項(xiàng)

集成的低噪聲LDO穩(wěn)壓器

最大相位檢測器頻率：100兆赫

精確頻率模式

快速鎖定和循環(huán)滑減

差分基準(zhǔn)時(shí)鐘輸入（LVDS和lvecpl標(biāo)準(zhǔn)）支持高達(dá)800 MHz

13位可編程參考分頻器

可編程電荷泵電流

數(shù)字鎖相檢測器

集成參考晶體振蕩器

R / W的SPI接口

邏輯兼容/寬容1.8伏/ 3.3伏

低功耗功能模式

電源電壓：3伏至5.4伏

小規(guī)模的接觸墊vfqfpn36包6 x 6 x 1毫米

0.25μm SiGe BiCMOS工藝