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    首頁產(chǎn)品索引VN2222L

    VN2222L

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    MOSFET

     

    產(chǎn)品信息

    This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

      Free from secondary breakdown

      Low power drive requirement

      Ease of paralleling

      Low CISS and fast switching speeds

      Excellent thermal stability

      Integral source-drain diode

      High input impedance and high gain

    電路圖、引腳圖和封裝圖

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    型號制造商描述購買
    VN2222LL-G-P013KEMET貼片電容(MLCC) 1210 6.8nF ±10% 250V X7R 立即購買
    VN2222LL-G-P003MERITEK貼片電阻 0402 30KΩ ±1% 1/16W ±100ppm/℃ 立即購買
    VN2222LL-GMaximIC GP OPAMP 1 CIRCUIT 8DIP 立即購買

    應用案例更多案例

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