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    首頁產(chǎn)品索引VN2460

    VN2460

    購買收藏
    MOSFET, N-CHANNEL ENHANCEMENT-MODE, 600V, 20 Ohm

     

    產(chǎn)品信息

    This enhancement-mode (normally-off) transistor utilizes a verticalDMOSstructure andwell-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

      Free from secondary breakdown

      Low power drive requirement

      Ease of paralleling

      Low CISS and fast switching speeds

      Excellent thermal stability

      Integral source-drain diode

      High input impedance and high gain

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