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    首頁產(chǎn)品索引STPSC1206

    STPSC1206

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    600體積功率肖特基二極管

     

    中文數(shù)據(jù)手冊

    產(chǎn)品信息

    These diodes are manufactured using silicon carbide substrate. This wide bandgap material supports the manufacture of a Schottky diode structure with a high voltage rating. Such diodes exhibit no or negligible recovery characteristics.

    The recovery characteristics are independent of the temperature.

    Using these diodes will significantly reduce the switching power losses of the associated MOSFET, and thus increase the efficiency of the overall application. These diodes will then outperform the power factor correction circuit operating in hard switching conditions.

    這些二極管是使用碳化硅襯底制造的。這種寬禁帶材料支持一個高電壓等級的肖特基二極管結構的制造。這種二極管表現(xiàn)出無或可忽略不計的恢復特性。

    恢復特性是獨立的溫度。

    使用這些二極管將大幅降低開關的MOSFET功率損失,從而提高了程序的整體效率。這些二極管將在硬開關條件下優(yōu)于功率因數(shù)校正電路。

    Key Features

    • No reverse recovery

    • Switching behavior independent of temperature

    • Dedicated to PFC boost diode

    主要特點

    無反向恢復

    溫度開關行為

    專用PFC升壓二極管


    電路圖、引腳圖和封裝圖

    應用案例更多案例

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