ST's STTH12S06 is a state of the art Ultrafast recovery diode. By the use of 600 V Pt doping Planar technology, this diode will outperform the power factor correction circuits operating in hardswitching conditions. The extremely low reverse recovery current of the STTH12S06, reduces significantly the switching power losses of the MOSFET, and thus increases the efficiency of the application. This allows designers to reduce the size of their heatsinks.

This device is also intended for applications in power supplies and power conversions systems, and other power switching applications.

ST的stth12s06是一個(gè)藝術(shù)的超快恢復(fù)二極管的狀態(tài)。采用600 V鉑摻雜平面技術(shù)的使用，這種二極管將優(yōu)于功率因數(shù)校正電路hardswitching條件操作。極低的反向恢復(fù)的stth12s06電流，降低了開關(guān)MOSFET的功率損耗，從而提高應(yīng)用程序的效率。這使設(shè)計(jì)人員能夠降低其散熱片尺寸。

該器件還用于在電源和電源轉(zhuǎn)換系統(tǒng)中的應(yīng)用，以及其他功率開關(guān)應(yīng)用。

Key Features

• Ultrafast recovery

• Low reverse recovery current

• Reduces losses in diode and switching transistor

• Low thermal resistance

• Higher frequency operation

• Insulated voltage: 1500 V_RMS

主要特點(diǎn)

超快恢復(fù)

低反向恢復(fù)電流

減少二極管和開關(guān)晶體管的損耗

低熱阻

高頻操作

絕緣電壓：1500 VRMS