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    首頁(yè)產(chǎn)品索引LND01

    LND01

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    MOSFET, LATERAL N-CHANNEL DEPLETION-MODE

     

    中文數(shù)據(jù)手冊(cè)

    產(chǎn)品信息

    The LND01 is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure andwell-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.The body of the transistor is connected to the GATE pin.The channel is therefore being pinched off by both the Gate and body. The GATE pin will have a diode connected to the drain terminal and another diode connected to the source terminal.

      Bi-directional

      Low on-resistance

      Low input capacitance

      Fast switching speeds

      High input impedance and high gain

      Low power drive requirement

      Ease of paralleling

    電路圖、引腳圖和封裝圖

    在線購(gòu)買

    型號(hào)制造商描述購(gòu)買
    LND01K1-GSiTime有源晶振 48MHz 3V ±50ppm SMD-4 立即購(gòu)買

    應(yīng)用案例更多案例

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