This device is part of ST's second generation of 600 V tandem diodes. It has ultralow switching-losses with a minimized Q_RR(6.5 nC) that makes it perfect for use in circuits working in hard-switching mode. In particular the V_F/Q_RRtrade-off positions this device between standard ultrafast diodes and silicon-carbide Schottky rectifiers in terms of price/performance ratio.

The device offers a new positioning giving more flexibility to power-circuit designers looking for good performance while still respecting cost constraints.

Featuring ST's Turbo 2 600 V technology, the device is particularly suited as a boost diode in continuous conduction mode power factor correction circuits.

該器件是600伏串聯(lián)二極管的第二代的一部分。它具有超低的開關(guān)損耗和減少Q(mào)rr（NC 6.5），使得它非常適合使用在電路工作在硬開關(guān)模式。特別是室顫/ qrrtrade OFF位置標(biāo)準(zhǔn)超快二極管和碳化硅肖特基整流器在價格/性能比的條款之間的裝置。

該設(shè)備提供了一個新的定位，讓更多的靈活性，電源電路設(shè)計人員在尋找良好的性能，同時還尊重成本約束。

具有圣的渦輪增壓600 2伏技術(shù)，該設(shè)備是特別適合作為升壓二極管在連續(xù)導(dǎo)通模式功率因數(shù)校正電路。

Key Features

• High voltage rectifier

• Tandem diodes in series

• Very low switching losses

• Insulated device with internal ceramic

• Equal thermal conditions for both 300 V diodes

• Static and dynamic equilibrium of internal diodes are warranted by design

• Insulated package:

• Capacitance: 7 pF

• Insulated voltage: 2500 V rms

主要特點

高壓整流器

串聯(lián)串聯(lián)二極管

極低的開關(guān)損耗

內(nèi)瓷絕緣裝置

相等的熱條件為300伏二極管

靜態(tài)和動態(tài)平衡的內(nèi)部二極管是必要的設(shè)計

絕緣包：

電容：7

絕緣電壓：2500伏均方根