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    首頁產(chǎn)品索引STPSC20H065C

    STPSC20H065C

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    650體積功率肖特基二極管

     

    中文數(shù)據(jù)手冊(cè)

    產(chǎn)品信息

    The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

    Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

    碳化硅二極管是一種超高性能的功率肖特基二極管。它是使用碳化硅襯底制造的。寬禁帶材料允許的肖特基二極管結(jié)構(gòu)的設(shè)計(jì)與650伏的評(píng)級(jí)。由于肖特基結(jié)構(gòu)，沒有恢復(fù)被證明在關(guān)斷和鈴聲模式是可以忽略不計(jì)。最小的電容關(guān)斷行為是獨(dú)立的溫度。

    特別適合使用在PFC應(yīng)用，這將促進(jìn)ST SiC二極管在硬開關(guān)條件下的性能。它的高正向浪涌能力，保證了良好的魯棒性，在暫態(tài)階段。

    Key Features

    • No or negligible reverse recovery

    • Switching behavior independent of temperature

    • Dedicated to PFC applications

    • High forward surge capability

    主要特點(diǎn)

    沒有或可以忽略不計(jì)的反向恢復(fù)

    溫度開關(guān)行為

    致力于PFC的應(yīng)用

    高正向浪涌能力


    電路圖、引腳圖和封裝圖

    應(yīng)用案例更多案例

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