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    首頁產(chǎn)品索引MD1210

    MD1210

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    MOSFET, HIGH SPEED, DUAL DRIVER

     

    中文數(shù)據(jù)手冊(cè)

    產(chǎn)品信息

    Please consider this device

    MD1210 is a high speed, dual MOSFET driver. It is designed to drive high voltage P and N-channel MOSFET transistors for medical ultrasound and other applications requiring a high output current for a capacitive load. The high-speed input stage of the MD1210 can operate from 1.2V to 5.0V logic interface with an optimum operating input signal range of 1.8V to 3.3V. An adaptive threshold circuit is used to set the level translator switch threshold to the average of the input logic 0 and logic 1 levels. The input logic levels may be ground referenced, even though the driver is putting out bipolar signals. The level translator uses a proprietary circuit, which provides DC coupling together with high-speed operation. VDD1, VDD2, and VH should be connected to the positive supply voltage, and VSS1, VSS2, and VL should be connected to 0V or to Ground. The GND pin is the logic control input signal digital ground. The output stage is capable of peak currents of up to ±2.0A, depending on the supply voltages used and load capacitance present.The OE pin serves a dual purpose. First, its logic H level is used to compute the threshold voltage level for the channel input level translators. Secondly, when OE is low, the outputs are disabled, with the A output high and the B output low. This assists in properly pre-charging the AC coupling capacitors that may be used in series in the gate drive circuit of an external PMOS and NMOS transistor pair.

      6ns rise and fall time with 1000pF load

      2.0A peak output source/sink current

      1.2V to 5.0V input CMOS compatible

      4.5V to 13V single positive supply voltage

      Smartlogic threshold

      Low jitter design

      Two matched channels

      Outputs can swing below ground

      Low inductance package

      Thermally-enhanced package

    電路圖、引腳圖和封裝圖

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    MD1210K6-GATSHEATSINK30X30X10MMR-TAB 立即購買

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