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    首頁產(chǎn)品索引LMG3410

    LMG3410

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    LMG3410 Spitfire - 具有集成驅(qū)動器和安全開關(guān)的智能 GaN FET

    制造商:TI

    中文數(shù)據(jù)手冊

    產(chǎn)品信息

    描述The LMG3410 Single-Channel Gallium-Nitride(GaN) Power Stage contains a 70-mΩ, 600-V GaN power transistor and specialized driver in an 8-mm by8-mm QFN package. Our Direct Drive architecture is used to create a normally-off device whileproviding the native switching performance of the GaN power transistor. When the LMG3410 isunpowered, an integrated low-voltage silicon MOSFET turns the GaN device off via its source. Innormal operation, the low-voltage silicon MOSFET is held on continuously while the GaN device isgated directly from an internally-generated negative voltage supply.The integrated driver provides additional protection and convenience features. Fastover-current, over-temperature and under-voltage lockout (UVLO) protections help create a fail-safesystem; the device?s status is indicated by the FAULT output. An internal5-V low-dropout regulator can provide up to 5 mA to supply external signal isolators. Finally,externally-adjustable slew rate and a low-inductance QFN package minimize switching loss, drainringing, and electrical noise generation.特性Integrated 70-mΩ, 600-V GaN and Driver Single Package for Ease of Design and LayoutUp to 1 MHzSteady-State Operation20-ns Typical Propagation Delay Operates From a Single Unregulated 12-V SupplyExternally-Adjustable Drive Strength for Switching Performance and EMIControlSupports 25 to 100 V/nsIntegrated DC-DC Converter for Negative DriveVoltage Fault Output Ensures SafetyUVLO Protection Over-Current Protection Over-Temperature ProtectionHigh Edge-Rate Tolerance All trademarks are the property of their respective owners.

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    型號制造商描述購買
    XLMG3410RWHT-- 立即購買

    技術(shù)資料

    標(biāo)題類型大小(KB)下載
    High Voltage Half Bridge Design Guide for LMG3410 Smart GaN FETPDF694 點擊下載

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