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    首頁產(chǎn)品索引FFSD08120A

    FFSD08120A

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    ?SiC Diode - 1200V, 8A, DPAK

    制造商:ON

    中文數(shù)據(jù)手冊

    產(chǎn)品信息

    Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
    • Max Junction Temperature 175 °C
    • High Surge Current Capacity
    • Positive Temperature Coefficient
    • Ease of Paralleling
    • No Reverse Recovery / No Forward Recovery

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    FFSD08120A-- 立即購買

    技術(shù)資料

    標題類型大?。↘B)下載
    DPAK3 (TO-252 3 LD)PDF152 點擊下載
    Silicon Carbide Schottky DiodePDF308 點擊下載
    FFSD08120A_PspiceRAR14 點擊下載
    FFSD08120A_SIMetrixRAR23 點擊下載

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