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    首頁產(chǎn)品索引TP2104

    TP2104

    購買收藏
    MOSFET, P-CHANNEL ENHANCEMENT-MODE, -40V, 6.0 Ohm

    制造商:Microchip

    中文數(shù)據(jù)手冊

    產(chǎn)品信息

    This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure andwell-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

      High input impedance and high gain

      Low power drive requirement

      Ease of paralleling

      Low CISS and fast switching speeds

      Excellent thermal stability

      Integral source-drain diode

      Free from secondary breakdown

    電路圖、引腳圖和封裝圖

    在線購買

    型號制造商描述購買
    TP2104N3-G-P003Microchip 立即購買
    TP2104K1-GMicrochip 立即購買
    TP2104N3-GMicrochip 立即購買

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