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    首頁(yè)產(chǎn)品索引TC2320

    TC2320

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    MOSFET, N AND P CHANNEL, 200V

     

    中文數(shù)據(jù)手冊(cè)

    產(chǎn)品信息

    TC2320 consists of a high voltage, low threshold N- and P-channel MOSFET in an 8-Lead SOIC package. This low threshold enhancement-mode (normally-off) transistor utilizes an advanced vertical DMOS structure andwell-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

      Low threshold

      Low on-resistance

      Low input capacitance

      Fast switching speeds

      Freedom from secondary breakdown

      Low input and output leakage

      Independent, electrically isolatedN- and P-channels

    電路圖、引腳圖和封裝圖

    在線購(gòu)買

    型號(hào)制造商描述購(gòu)買
    TC2320TG-GKEMET貼片電容(MLCC) 1210 36pF ±20% 25V X8R 立即購(gòu)買

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