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    首頁產(chǎn)品索引STPSC8H065C

    STPSC8H065C

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    650體積功率肖特基二極管

     

    中文數(shù)據(jù)手冊

    產(chǎn)品信息

    The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimized capacitive charge at turn-off behavior is independent of temperature.

    Especially suited for use in interleaved or bridge-less topologies, this dual-diode rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

    碳化硅二極管是一種超高性能的功率肖特基二極管。它是使用碳化硅襯底制造的。寬禁帶材料允許的肖特基二極管結(jié)構(gòu)的設(shè)計(jì)與650伏的評(píng)級(jí)。由于肖特基結(jié)構(gòu),沒有恢復(fù)被證明在關(guān)斷和鈴聲模式是可以忽略不計(jì)。最小的電容充電,關(guān)斷行為是獨(dú)立的溫度。

    特別適合于在交錯(cuò)或橋接較少的拓?fù)浣Y(jié)構(gòu),這種雙二極管整流器將提高在硬開關(guān)條件下的性能。它的高正向浪涌能力,保證了良好的魯棒性,在暫態(tài)階段。

    Key Features

    • No or negligible reverse recovery

    • Switching behavior independent of temperature

    • High forward surge capabilit

    主要特點(diǎn)

    沒有或可以忽略不計(jì)的反向恢復(fù)

    溫度開關(guān)行為

    高浪涌能力


    電路圖、引腳圖和封裝圖

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