The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

碳化硅二極管是一種超高性能的功率肖特基二極管。它是使用碳化硅襯底制造的。寬禁帶材料允許的肖特基二極管結構的設計與650伏的評級。由于肖特基結構，沒有恢復被證明在關斷和鈴聲模式是可以忽略不計。最小的電容關斷行為是獨立的溫度。

特別適合使用在PFC應用，這將促進ST SiC二極管在硬開關條件下的性能。它的高正向浪涌能力，保證了良好的魯棒性，在暫態(tài)階段。

Key Features

• No reverse recovery charge in application current range

• Switching behavior independent of temperature

• High forward surge capability

• Insulated package TO-220AC Ins:

• Insulated voltage: 2500 V rms

• Typical package capacitance: 7 pF

主要特點

在應用程序電流范圍內沒有反向恢復充電

溫度開關行為

高正向浪涌能力

絕緣包to-220ac INS：

絕緣電壓：2500伏均方根

典型封裝電容：7