The SST25VF080B devices are enhanced with improved operating frequency for lower power consumption. SST25VF080B SPI serial flash memories are manufactured with SST's proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

   Single Voltage Read and Write Operations– 2.7-3.6V

   Serial Interface Architecture

  Supports 50 MHz SPI clock (80 MHz no longer available see EOL NOTIFICATION)

   Superior Reliability

  Endurance: 100,000 Cycles (typical)

  Greater than 100 years Data Retention

   Low Power Consumption:

  Program & Erase Current: 30mA (max)

  Active Read Current: 10 mA (typical)

  Standby Current: 5 μA (typical)

   Flexible Erase Capability

  Uniform 4 KByte sectors

  Uniform 32 KByte & 64 KByte overlay blocks

   Fast Erase and Byte-Program:

  Chip-Erase Time: 35 ms (typical)

  Sector-/Block-Erase Time: 18 ms (typical)

  Byte-Program Time: 7 μs (typical)

   Auto Address Increment (AAI) Programming

  Decrease total chip programming time over Byte-Program operations

   End-of-Write Detection

  Software polling the BUSY bit in Status Register

  Busy Status readout on SO pin in AAI Mode

   Hold Pin (HOLD#)

  Suspends a serial sequence to the memory without deselecting the device

   Write Protection (WP#)

  Enables/Disables the Lock-Down function of the status register

   Software Write Protection

  Write protection through Block-Protection bits in the status register

   Temperature Range

  Commercial: 0°C to +70°C

  Industrial: -40°C to +85°C

   Packages Available– 8-lead SOIC (200 mils)– 8-contact WSON (6mm x 5mm)– 8-lead PDIP (300 mils)– 8-bump CSP

   All devices are RoHS compliant