
制造商:Microchip
These enhancement-mode (normally-off) transistors utilize a lateral MOS structure andwell-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices.Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. The low threshold voltage and low on-resistance characteristics are ideally suited for hand held, battery operated applications.
Ultra-low threshold
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Freedom from secondary breakdown
Low input and output leakage
LP0701 封裝圖
LP0701 封裝圖
型號 | 制造商 | 描述 | 購買 |
---|---|---|---|
LP0701LG-G | Microchip | 立即購買 | |
LP0701N3-G | Microchip | 立即購買 |
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