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    首頁產(chǎn)品索引FDPF8D5N10C

    FDPF8D5N10C

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    ?N-Channel Shielded Gate PowerTrench

    制造商:ON

    中文數(shù)據(jù)手冊(cè)

    產(chǎn)品信息

    This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench
    process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
    • Max RDS(on) = 8.5 mΩ at VGS = 10 V, ID = 76 A
    • High Performance Trench Technology for Extremely Low RDS(on)
    • Extremely Low Reverse Recovery Charge, Qrr
    • Low Gate Charge, QG = 25nC ( Typ.)
    • High Power and Current Handling Capability
    • 100% UIL Tested
    • RoHS Compliant

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    FDPF8D5N10C-- 立即購買

    技術(shù)資料

    標(biāo)題類型大小(KB)下載
    TO-220 Fullpack, 3-Lead / TO-220F-3FGPDF53 點(diǎn)擊下載
    N-Channel Shielded Gate PowerTrench MOSFETPDF969 點(diǎn)擊下載

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