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    首頁產(chǎn)品索引DN3545

    DN3545

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    MOSFET, DEPLETION-MODE, 450V, 20 Ohm

     

    產(chǎn)品信息

    These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure andwell-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

      High inputimpedance

      Low input capacitance

      Fast switching speeds

      Low on-resistance

      Free from secondary breakdown

      Low input and output leakage

    電路圖、引腳圖和封裝圖

    在線購買

    型號制造商描述購買
    DN3545N8-GMaximIC OPAMP GP 1 CIRCUIT 8UMAX 立即購買
    DN3545N3-GMaximIC BUFFER 1 CIRCUIT SOT23-5 立即購買

    應(yīng)用案例更多案例

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