
The DN2530 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure andwell-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
DN2530 封裝圖
DN2530 封裝圖
型號 | 制造商 | 描述 | 購買 |
---|---|---|---|
DN2530N3-G | SULLINS | CONN HEADER R/A 9POS 2MM | 立即購買 |
DN2530N8-G | Maxim | IC OPAMP GP 1 CIRCUIT SOT23-5 | 立即購買 |
介紹CC2530 外部中斷配置步驟。
介紹CC2530 GPIO口輸入配置配置。
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