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    首頁產(chǎn)品索引2N6661

    2N6661

    購買收藏
    MOSFET, N-CHANNEL ENHANCEMENT MODE, 90V, 4 Ohm

     

    產(chǎn)品信息

    2N6661 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

      Free from secondary breakdown

      Low power drive requirement

      Ease of paralleling

      Low CISS and fast switching speeds

      Excellent thermal stability

      Integral source-drain diode

      High input impedance and high gain

    電路圖、引腳圖和封裝圖

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    型號制造商描述購買
    2N6661SiTime有源晶振 310MHz SMD5032_4P 立即購買

    應(yīng)用案例更多案例

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